CORE BREAKTHROUGH: SOLVING A DECADES-OLD PROBLEM
Traditional Nickel plating on Zinc has always faced an insurmountable technical barrier: Galvanic Displacement. The highly active Zinc substrate is immediately corroded by N2+ ions, resulting in a porous, poorly adherent Nickel layer.
Historically, the only solution was to use a highly toxic Cyanide Copper strike CuCN as an underlayer to isolate the Zinc surface before subsequent Nickel plating. This solution created enormous burdens related to environmental regulations, legal risks, and toxic waste disposal costs.
THE DRAGON V BREAKTHROUGH: CHEMICAL SEMICONDUCTOR MECHANISM
Dragon V’s Semiconductor Nickel Plating Technology (DENBP/ST-01) is the answer. We bypass the need for a metal underlayer by using chemistry to control the electrochemical reaction at the surface.
- Control Function (Passivation): The $\text{DENBP/ST-01}$ electrolyte contains specialized Complex Compounds and Phosphorous acid (H3PO3). These components instantly create an ultra-thin, localized passivation layer on the Zinc surface.
- Instantaneous Suppression: This layer acts as a “control switch,” immediately slowing down or neutralizing the galvanic displacement reaction.
- High-Speed Co-Deposition: The primary Nickel deposition process occurs at a very high rate, securely locking the Zinc substrate before displacement can cause damage.
PERMANENT BENEFITS: 100% ELIMINATION OF THE OLD BURDEN
- Cyanide Elimination: The invention permanently eliminates 100% of the need for CuCN, meaning 100% elimination of toxic waste treatment costs and legal risks.
- Process Simplification: Cuts 3 intermediate plating steps down to 1 core Nickel plating step (a 67% reduction in core steps).
- Legal Compliance: Ensures absolute compliance with strict government regulations regarding the management and use of hazardous chemicals.

